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| Advance Product Information October 28, 2003 60GHz Low Noise Amplifier Key Features * * * * * * TGA4600-EPU Typical Frequency Range: 57 - 65 GHz 4 dB Nominal Noise Figure 13 dB Nominal Gain Bias 3.0 V, 41 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.62 x 0.84 x 0.10 mm (0.064 x 0.033 x 0.004 in) RF Probe Data Bias Conditions: Vd = 3.0 V, Id =41 mA 15 10 Small Signal (dB) 5 0 -5 -10 -15 -20 -25 -30 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 Frequency (GHz) 8 7 Noise Figure (dB) 6 5 4 3 2 1 0 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 Frequency (GHz) Primary Applications * * Wireless LAN Point-to-Point Radio GAIN ORL IRL Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 28, 2003 TGA4600-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id Ig P IN PD T CH TM T STG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous W ave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE 5V -1 TO +0.5 V 200 mA 5 mA 15 dBm 0.39W 150 C 320 C -65 to 150 0C 0 0 NOTES 2/ 2/ 3/ 3/ 2/ 4/ 5/ 6/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD . Total current for the entire MMIC. W hen operated at this bias condition with a base plate temperature of 70 0C, the median life is 1.0E+6 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 6/ TABLE II DC PROBE TESTS 0 (Ta = 25 C, Nominal) SYMBOL VBVGD, Q1-Q3 VBVGS, Q3 VP, Q1,2,3 PARAMETER Breakdown Voltage Gate-Source Breakdown Voltage Gate-Source Pinch-off Voltage MIN. -30 -30 -1.0 TYP. MAX. -5 -5 -0.1 UNITS V V V Q1 is 100 um FET, Q2 is 100 um FET, Q3 is 210 um FET. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 28, 2003 TGA4600-EPU TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Noise Figure, NF TYPICAL 57 - 65 3.0 41 -0.5 - 0 13 20 6 4 UNITS GHz V mA V dB dB dB dB TABLE IV THERMAL INFORMATION PARAMETER RJC Thermal Resistance (channel to Case) TEST CONDITIONS Vd = 3 V Id = 41 mA Pdiss = 0.12 W TCH O ( C) 80 RJC (C/W) 83 TM (HRS) 1.2 E+9 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 28, 2003 TGA4600-EPU RF Probe Data Bias Conditions: Vd = 3.0 V, Id = 41 mA 15 14 13 12 11 10 9 8 7 6 5 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 Frequency (GHz) 8 Gain (dB) 7 6 Noise Figure (dB) 5 4 3 2 1 0 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 28, 2003 TGA4600-EPU RF Probe Data Bias Conditions: Vd = 3.0 V, Id = 41 mA 0 -2 -4 -6 -8 Input Return Loss (dB) -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 Frequency (GHz) 0 -2 -4 -6 -8 Output Return Loss (dB) -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 28, 2003 TGA4600-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 28, 2003 TGA4600-EPU Recommended Chip Assembly Diagram 3 mil ribbon 3 mil ribbon Ribbons as short as possible GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 28, 2003 TGA4600-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. 0 Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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